B&K 530 Semiconductor Tester 电路图.pdf

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12、SNOIIVJIdIf,EdS :IINJUIJ.NI BRIEF SUMMARY OF WHAT THE 530 WILL DO I i I l t t T il ,ru 4 k fl *id d q N or P channel). 6. Identifies Cathode-Gate-Anode leads of SCRs. 7. Measures all breakdown and leakage parameters of transistors. 8. Measures lpg5 and gate leakage of FETs. 9. Measures BVggg of tran

13、sistors and PIV of diodes up to 100 v. 10. Measures reverse leakage current of diodes. 1 1. Measures fr of bipolar transistors, in 3 ranges: 0-100 MHz, 0-500 MHz,0-1500 MHz. 12. Determines whether device is a transistor, FET or SCR. 13. Will test new power FETs, both enhancement and depletion types.

14、 HINTS AND KINKS IDENTIFYING TRANSISTORS AND DIODES 1. Nearly all germanium transistors come in .rnetal cases, either the tubular type with flexible leads, or in the standard TO-5 package. 2. Power transistors in stud packages or in the TO-5 or TO-3 can be either germanium, siliCon or FET. Two- and

15、three-digit 2N-numbers are mostly germanium. 3. The T0-66 power transistors and the plastic power tab packages are nearly always silicon. The collector is usually, but not always, connected to the mounting tab and the center lead. This always can be verified by a continuity check between the collect

16、or pin and the mounting tab. 4. The base leail of most modern plastic-type transistors is either the center lead or the right-hand lead when facing the flat side with the leads down. In the latter case, the collector lead is in the middle. 5. Most plastic FETs have the gate lead on the right side wh

17、en facing the flat side with the leads down and the source in the middle, but there are exceptions. In nearly all junction FETs, the source and drain can be interchanged with no adverse effects. All transistors will have some gain with the collector and emitter leads interchanged, with the exception

18、 of Darlingtons. Germanium signal diodes usually can be recognized by their transparent hollow glass cases with either three or four color bands, or type numbers printed on them. Silicon diodes usually are painted because silicon is light-sensitivg urd must be protected from ambient tiftrt. fne moos

19、e types, such as thestud package, can be either germanium or silicon. 8. Power FETs in TO-3 packages generally have lead configurations similar to bipolar transistors, with the following comparisons : 6. 7. FET Drain Gate Source 10. The APPENDIX to this instruction manual provides the schematic symb

20、ols for devices tested by the Model 530. This information should be used to identify the device prior to testing. An extensive list of semiconductor test and operating parameters is provided in the APPENDIX also. -r. I . l I I I I : I I I I I i I t- I I ! I i I I I t It i i ITOSflU AVh CNIOVEU ACVXV

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38、rar NdN rr? ueqikr slqBIT .IqEN HJN/NdN 6I 8I 0I 6 8 9 s .L 71 L .I .II (t qg o1 re;aA) SUOIVJIONI ONV SIOUINOJ USING THE MODEL 530 I IN-CIRCIIT TESTING CAI.fION Make sure all power is turned off in the circuit being tested, and that all capacitors are dis- charged. A. Transistors and FETs: 1. Set t

39、he DRIVE Switch (5) to the LO position. 2. Connect the three test leads (in any manner) to the three leads of the device you wish to test. The test leads must be plugged into their respective color Test kad Sockets (6). 3. Move the Test Switch (4) slowly through its six positions until one of the tw

40、o red lamps (1) or (2), glows. A tone also will be heard if SPEAKER Switch (8) is ON. The lamp that glows indicates whether the device is NPN (l) or PNP (2) or N oi P channel. In LO drive, most transistors that test good will do so in only one Test Switch position (see THINGS TO KNOW ABOUT THE 530).

41、 In this Test Switch position, all the leads of the transistor can be identified as shown in the I-ead Identification Window (3). Most FETs will test good (LO or HI drive) in two Test Switch positions having the same BASE color shown in the IBad Identification Window (3), since practi- cally all jun

42、ction FETs are symmetrical. The BASE color indicated is the gate Iead of the FET. 4. If there is no good indication (neither of the two lamps glows) as the Test Switch (a) is slowly moved througlr its six positions, in LO drive, then the device under test is one of the following: a. Device with high

43、 leakage or very low gain (-uy not function properly in circuit). b. Device with open/shorted elements. c. Device with excessive circuit shunting (see SPECIFICATIONS). d. FET that will not test with LO drive. 5. Re-test the device, using HI drive. In HI drive, most transistors that test good will do

44、 so in /wo adjacent Test Switch positions having the same BASE color shown in the kad Identification Window. Only the base lead of the transistor can then be identified. 6. If the device tests good using HI drive, then 4(a) or 4(d) above could be true. 7. If the device does not test good in any Test

45、 Switch position, in HI drive, lemove the device from the circuit and re-test using OUT-OF-CIRCUIT pro- cedures. B. SCRS: 1. Set the DRIVE switch (5) to the HI position. t0 2. Connect the three test leads (in any manner) to the tfuee leads of the SCR you wish to test. 3. Move the Test Switch (4) slo

46、wly through its six positions until the NPN lamp (l) glows in one position and PNP lamp (2) glows in another position haying a different BASE color as shown in the Lead Identification Window (3). 4. The SCR is good only if the following indications are obtained: a. One NPN. b. One PNP, NOTE: indicat

47、ions must not have same BASE color. LEAD IDENTIFICATION: a. The BASE color shown in the kad ldentifica tion Window (3) is the gate lead when the NPN lamp (1) glows. b. The BASE color shown in the kad ldentifica tion Window is the cathode lead when the PNP (2) lamp glows. 5. If the SCR tests bad, the

48、n it should be removed from the circuit and tested again (muy be subjebt to excessive shunting in-circuit), using outof- circuit procedures. C. Diodes: l. Set LEAKAGE VOLTS control (14) to zero. 2. Set Test Switch (a) to top position (Green base identification). 3. Set NPN/PNP Switch (12) to PNP. 4.

49、 Connect the blue and yellow test leads across the diode to be tested. 5. Adjust the LEAKAGE VOLTS Control (1a) to approximately l0 volts, as indicated on the con trol panel. 6. Depress the PUSH-TO-TEST Switch (13) and, while keeping this switch depressed, rotate the lest . Switch (a) to each of the upper two positions. (Green base identification.) 7. While performing step 6, obser