Onkyo-SKW-320-Service-Manual(1) 电路图 维修手册.pdf

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1、HTP-320 BLOCK DIAGRAM SKW-320 : POWERED SUBWOOFER HTP-320 RadioFans.CN 收音机爱 好者资料库 HTP-8230 SCHEMATIC DIAGRAM SKW-320: POWERED SUBWOOFER HT-320FGH LINE INPUT OUTPUT LEVEL AC 120V / 60Hz SPEAKER INPUT PC BOARDU02MAIN PC BOARDU01VR / LED PC BOARDU03 LED RED : STANDBY GREEN : ON RadioFans.CN 收音机爱 好者资料库

2、HTP-320 SCHEMATIC DIAGRAM SKW-8230 : POWERED SUBWOOFER HTP-8230 A 1 2 3 4 5 BCDEFGH LINE INPUT OUTPUT LEVEL AC 120V / 60Hz SPEAKER INPUT PC BOARDU02MAIN PC BOARDU01VR / LED PC BOARDU03 LED RED : STANDBY GREEN : ON RadioFans.CN 收音机爱 好者资料库 HTP-320 SCHEMATIC DIAGRAM SKW-320: POWERED SUBWOOFER A 1 2 3 4

3、 5 BCDEFGH LINE INPUT OUTPUT LEVEL AC 120V / 60Hz SPEAKER INPUT PC BOARDU02MAIN PC BOARDU01VR / LED PC BOARDU03 LED RED : STANDBY GREEN : ON HTP320 PC BOARD CONNECTION DIAGRAM SKW-320 : POWERED SUBWOOFER HTP-320 MAIN PC BOARD VR / LED PC BOARD INPUT PC BOARD HTP-320 PRINTED CIRCUIT BOARD VIEW SKW-32

4、0POWERED SUBWOOFER A 1 2 3 4 5 BCD INPUT PC BOARDU02 MAIN PC BOARDU01 VR / LED PC BOARDU03 No PC board view Look over the actual PC board on hand TDA7293 120V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (50V) DMOS POWER STAGE HIGH OUTPUT POWER (100W THD = 10%, RL =

5、8, VS = 40V) MUTING/STAND-BY FUNCTIONS NO SWITCH ON/OFF NOISE VERY LOW DISTORTION VERY LOW NOISE SHORT CIRCUIT PROTECTED (WITH NO IN- PUT SIGNAL APPLIED) THERMAL SHUTDOWN CLIP DETECTOR MODULARITY (MORE DEVICES CAN BE EASILY CONNECTED IN PARALLEL TO DRIVE VERY LOW IMPEDANCES) DESCRIPTION The TDA7293

6、is a monolithic integrated circuit in Multiwatt15 package, intended for use as audio class AB amplifier in Hi-Fi field applications (Home Stereo, self powered loudspeakers, Top- class TV). Thanks to the wide voltage range and to the high out current capability it is able to sup- ply the highest powe

7、r into both 4 and 8 loads. The built in muting function with turn on delay simplifies the remote operation avoiding switching on-off noises. Parallel mode is made possible by connecting more device through of pin11. High output power can be delivered to very low impedance loads, so optimizing the th

8、ermal dissipation of the system. January 2003 IN-2 R2 680 C2 22F C1 470nF IN+ R1 22K 3 R3 22K - + MUTE STBY 4 VMUTE VSTBY 10 9 SGND MUTE STBY R4 22K THERMAL SHUTDOWN S/C PROTECTION R5 10K C3 10FC4 10F 1 STBY-GND C5 22F 713 14 6 158 -Vs-PWVs BOOTSTRAP OUT +PWVs+Vs C9 100nFC8 1000F -Vs D97AU805A +Vs C

9、7 100nFC6 1000F BUFFER DRIVER 11 BOOT LOADER 12 5 VCLIP CLIP DET (*) (*) see Application note (*) for SLAVE function (*) Figure 1: Typical Application and Test Circuit Multiwatt15V Multiwatt15H ORDERING NUMBERS: TDA7293V TDA7293HS MULTIPOWER BCD TECHNOLOGY 1/15 ABSOLUTE MAXIMUM RATINGS SymbolParamet

10、erValueUnit VSSupply Voltage (No Signal)60V V1VSTAND-BY GND Voltage Referred to -VS (pin 8)90V V2Input Voltage (inverting) Referred to -VS 90V V2 - V3Maximum Differential Inputs30V V3Input Voltage (non inverting) Referred to -VS 90V V4Signal GND Voltage Referred to -VS 90V V5Clip Detector Voltage Re

11、ferred to -VS 120V V6Bootstrap Voltage Referred to -VS 120V V9Stand-by Voltage Referred to -VS 120V V10Mute Voltage Referred to -VS 120V V11Buffer Voltage Referred to -VS 120V V12Bootstrap Loader Voltage Referred to -VS 100V IOOutput Peak Current10A PtotPower Dissipation Tcase = 70C50W TopOperating

12、Ambient Temperature Range0 to 70C Tstg, TjStorage and Junction Temperature150C 1 2 3 4 5 6 7 9 10 11 8 BUFFER DRIVER MUTE STAND-BY -VS (SIGNAL) +VS (SIGNAL) BOOTSTRAP CLIP AND SHORT CIRCUIT DETECTOR SIGNAL GROUND NON INVERTING INPUT INVERTING INPUT STAND-BY GND TAB CONNECTED TO PIN 8 13 14 15 12 -VS

13、 (POWER) OUT +VS (POWER) BOOTSTRAP LOADER D97AU806 PIN CONNECTION (Top view) THERMAL DATA SymbolDescriptionTypMaxUnit Rth j-caseThermal Resistance Junction-case11.5C/W TDA7293 2/15 ELECTRICAL CHARACTERISTICS (Refer to the Test Circuit VS = 40V, RL = 8, Rg = 50 ; Tamb = 25C, f = 1 kHz; unless otherwi

14、se specified). SymbolParameterTest ConditionMin.Typ.Max.Unit VSSupply Range1250V IqQuiescent Current50100mA IbInput Bias Current0.31A VOSInput Offset Voltage-1010mV IOSInput Offset Current0.2A PORMS Continuous Output Powerd = 1%: RL = 4; VS = 29V, 7580 80 W d = 10% RL = 4 ; VS = 29V 90100 100 W dTot

15、al Harmonic Distortion (*)PO = 5W; f = 1kHz PO = 0.1 to 50W; f = 20Hz to 15kHz 0.005 0.1 % % ISCCurrent Limiter ThresholdVS 40V6.5A SRSlew Rate510V/s GVOpen Loop Voltage Gain80dB GVClosed Loop Voltage Gain (1)293031dB eNTotal Input NoiseA = curve f = 20Hz to 20kHz 1 310 V V RiInput Resistance 100k S

16、VRSupply Voltage Rejectionf = 100Hz; Vripple = 0.5Vrms75dB TSThermal ProtectionDEVICE MUTED150C DEVICE SHUT DOWN160C STAND-BY FUNCTION (Ref: to pin 1) VST onStand-by on Threshold1.5V VST offStand-by off Threshold3.5V ATTst-byStand-by Attenuation7090dB Iq st-byQuiescent Current Stand-by0.51mA MUTE FU

17、NCTION (Ref: to pin 1) VMonMute on Threshold1.5V VMoffMute off Threshold3.5V ATTmuteMute AttenuatIon6080dB CLIP DETECTOR DutyDuty Cycle ( pin 5)THD = 1% ; RL = 10K to 5V10% THD = 10% ; RL = 10K to 5V 304050% ICLEAKPO = 50W3A SLAVE FUNCTION pin 4 (Ref: to pin 8 -VS) VSlaveSlaveThreshold1V VMasterMast

18、er Threshold3V Note (1): GVmin 26dB Note: Pin 11 only for modular connection. Max external load 1M/10 pF, only for test purpose Note (*): Tested with optimized Application Board (see fig. 2) TDA7293 3/15 Figure 2: Typical Application P.C. Board and Component Layout (scale 1:1) TDA7293 4/15 APPLICATI

19、ON SUGGESTIONS (see Test and Application Circuits of the Fig. 1) The recommended values of the external components are those shown on the application circuit of Fig- ure 1. Different values can be used; the following table can help the designer. COMPONENTSSUGGESTED VALUEPURPOSE LARGER THAN SUGGESTED

20、 SMALLER THAN SUGGESTED R1 (*)22kINPUT RESISTANCEINCREASE INPUT IMPEDANCE DECREASE INPUT IMPEDANCE R2680CLOSED LOOP GAIN SET TO 30dB (*) DECREASE OF GAININCREASE OF GAIN R3 (*)22kINCREASE OF GAINDECREASE OF GAIN R422kST-BY TIME CONSTANT LARGER ST-BY ON/OFF TIME SMALLER ST-BY ON/OFF TIME; POP NOISE R

21、510kMUTE TIME CONSTANT LARGER MUTE ON/OFF TIME SMALLER MUTE ON/OFF TIME C10.47FINPUT DC DECOUPLING HIGHER LOW FREQUENCY CUTOFF C222FFEEDBACK DC DECOUPLING HIGHER LOW FREQUENCY CUTOFF C310FMUTE TIME CONSTANT LARGER MUTE ON/OFF TIME SMALLER MUTE ON/OFF TIME C410FST-BY TIME CONSTANT LARGER ST-BY ON/OFF

22、 TIME SMALLER ST-BY ON/OFF TIME; POP NOISE C522FXN (*)BOOTSTRAPPINGSIGNAL DEGRADATION AT LOW FREQUENCY C6, C81000FSUPPLY VOLTAGE BYPASS C7, C90.1FSUPPLY VOLTAGE BYPASS DANGER OF OSCILLATION (*) R1 = R3 for pop optimization (*) Closed Loop Gain has to be 26dB (*) Multiplay this value for the number o

23、f modular part connected MASTER UNDEFINED SLAVE -VS +3V -VS +1V -VS D98AU821 Slave function: pin 4 (Ref to pin 8 -VS) Note: If in the application, the speakers are connected via long wires, it is a good rule to add between the output and GND, a Boucherot Cell, in order to avoid dangerous spurious os

24、cillations when the speakers terminal are shorted. The suggested Boucherot Resistor is 3.9/2W and the capacitor is 1F. TDA7293 5/15 INTRODUCTION In consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers able to match, with a low cost, the per- formance

25、obtained from the best discrete de- signs. The task of realizing this linear integrated circuit in conventional bipolar technology is made ex- tremely difficult by the occurence of 2nd break- down phoenomenon. It limits the safe operating area (SOA) of the power devices, and, as a con- sequence, the

26、 maximum attainable output power, especially in presence of highly reactive loads. Moreover, full exploitation of the SOA translates into a substantial increase in circuit and layout complexity due to the need of sophisticated pro- tection circuits. To overcome these substantial drawbacks, the use o

27、f power MOS devices, which are immune from secondary breakdown is highly desirable. The device described has therefore been devel- oped in a mixed bipolar-MOS high voltage tech- nology called BCDII 100/120. 1) Output Stage The main design task in developping a power op- erational amplifier, independ

28、ently of the technol- ogy used, is that of realization of the output stage. The solution shown as a principle shematic by Fig3 represents the DMOS unity - gain output buffer of the TDA7293. This large-signal, high-power buffer must be ca- pable of handling extremely high current and volt- age levels

29、 while maintaining acceptably low har- monic distortion and good behaviour over frequency response; moreover, an accurate con- trol of quiescent current is required. A local linearizing feedback, provided by differen- tial amplifier A, is used to fullfil the above require- ments, allowing a simple a

30、nd effective quiescent current setting. Proper biasing of the power output transistors alone is however not enough to guarantee the ab- sence of crossover distortion. While a linearization of the DC transfer charac- teristic of the stage is obtained, the dynamic be- haviour of the system must be tak

31、en into account. A significant aid in keeping the distortion contrib- uted by the final stage as low as possible is pro- vided by the compensation scheme, which ex- ploits the direct connection of the Miller capacitor at the amplifiers output to introduce a local AC feedback path enclosing the outpu

32、t stage itself. 2) Protections In designing a power IC, particular attention must be reserved to the circuits devoted to protection of the device from short circuit or overload condi- tions. Due to the absence of the 2nd breakdown phe- nomenon, the SOA of the power DMOS transis- tors is delimited on

33、ly by a maximum dissipation curve dependent on the duration of the applied stimulus. In order to fully exploit the capabilities of the power transistors, the protection scheme imple- mented in this device combines a conventional SOA protection circuit with a novel local tempera- ture sensing techniq

34、ue which dynamically con- trols the maximum dissipation. Figure 3: Principle Schematic of a DMOS unity-gain buffer. TDA7293 6/15 In addition to the overload protection described above, the device features a thermal shutdown circuit which initially puts the device into a muting state ( Tj = 150 oC) a

35、nd then into stand-by ( Tj = 160 oC). Full protection against electrostatic discharges on every pin is included. 3) Other Features The device is provided with both stand-by and mute functions, independently driven by two CMOS logic compatible input pins. The circuits dedicated to the switching on an

36、d off of the amplifier have been carefully optimized to avoid any kind of uncontrolled audible transient at the output. The sequence that we recommend during the ON/OFF transients is shown by Figure 4. The application of figure 5 shows the possibility of using only one command for both st-by and mut

37、e functions. On both the pins, the maximum appli- cable range corresponds to the operating supply voltage. APPLICATION INFORMATION HIGH-EFFICIENCY Constraints of implementing high power solutions are the power dissipation and the size of the power supply. These are both due to the low effi- ciency o

38、f conventional AB class amplifier ap- proaches. Here below (figure 6) is described a circuit pro- posal for a high efficiency amplifier which can be adopted for both HI-FI and CAR-RADIO applica- tions. 1N4148 10K30K 20K 10F10F MUTESTBY D93AU014 MUTE/ ST-BY Figure 5: Single Signal ST-BY/MUTE Control

39、Circuit PLAY OFF ST-BY MUTEMUTE ST-BYOFF D98AU817 5V 5V +Vs (V) +40 -40 VMUTE PIN #10 (V) VST-BY PIN #9 (V) -Vs VIN (mV) IQ (mA) VOUT (V) Figure 4: Turn ON/OFF Suggested Sequence TDA7293 7/15 The TDA7293 is a monolithic MOS power ampli- fier which can be operated at 100V supply voltage (120V with no

40、 signal applied) while delivering out- put currents up to 6.5 A. This allows the use of this device as a very high power amplifier (up to 180W as peak power with T.H.D.=10 % and Rl = 4 Ohm); the only drawback is the power dissipation, hardly manageable in the above power range. The typical junction-

41、to-case thermal resistance of the TDA7293 is 1 oC/W (max= 1.5 oC/W). To avoid that, in worst case conditions, the chip tem- perature exceedes 150 oC, the thermal resistance of the heatsink must be 0.038 oC/W ( max am- bient temperature of 50 oC). As the above value is pratically unreachable; a high

42、efficiency system is needed in those cases where the continuous RMS output power is higher than 50-60 W. The TDA7293 was designed to work also in higher efficiency way. For this reason there are four power supply pins: two intended for the signal part and two for the power part. T1 and T2 are two po

43、wer transistors that only operate when the output power reaches a certain threshold (e.g. 20 W). If the output power in- creases, these transistors are switched on during the portion of the signal where more output volt- age swing is needed, thus bootstrapping the power supply pins (#13 and #15). Th

44、e current generators formed by T4, T7, zener diodes Z1, Z2 and resistors R7,R8 define the minimum drop across the power MOS transistors of the TDA7293. L1, L2, L3 and the snubbers C9, R1 and C10, R2 stabilize the loops formed by the bootstrap circuits and the output stage of the TDA7293. By consider

45、ing again a maximum average output power (music signal) of 20W, in case of the high efficiency application, the thermal resistance value needed from the heatsink is 2.2oC/W (Vs =50 V and Rl= 8 Ohm). All components (TDA7293 and power transis- tors T1 and T2) can be placed on a 1.5oC/W heatsink, with

46、the power darlingtons electrically insulated from the heatsink. Since the total power dissipation is less than that of a usual class AB amplifier, additional cost sav- ings can be obtained while optimizing the power supply, even with a high heatsink . BRIDGE APPLICATION Another application suggestio

47、n is the BRIDGE configuration, where two TDA7293 are used. In this application, the value of the load must not be lower than 8 Ohm for dissipation and current capability reasons. A suitable field of application includes HI-FI/TV subwoofers realizations. The main advantages offered by this solution a

48、re: - High power performances with limited supply voltage level. - Considerably high output power even with high load values (i.e. 16 Ohm). With Rl= 8 Ohm, Vs = 25V the maximum output power obtainable is 150 W, while with Rl=16 Ohm, Vs = 40V the maximum Pout is 200 W. APPLICATION NOTE: (ref. fig. 7)

49、 Modular Application (more Devices in Parallel) The use of the modular application lets very high power be delivered to very low impedance loads. The modular application implies one device to act as a master and the others as slaves. The slave power stages are driven by the master device and work in parallel all together, while the in- put and the gain stages of the slave device are dis- abled, the figure below shows the connections re- quired to configure two devices to work together. The master chip connections are the same as the nor